DASF0035998.pdf by Infineon Technologies

Partial File Text IPB180N03S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary V DS 30 V R DS(on) 0.95 m ID 180 A Features · N-channel - Enhancement mode PG-TO263-7-3 · AEC quali
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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4N03LH0 IPB180N03S4L-H0 PG-TO263-7-3 smd marking E R