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    DSA0037909.pdf by Zentrum Mikroelektronik Dresden

    • U636H04 Preliminary PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable
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    PDIP24 U636H04
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