DASF0036501.pdf
by Toshiba
- 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA l Small package Maximum Ratings
- Original
- Yes
- No
- Active
- Find it at Findchips.com
