DASF0036632.pdf by Infineon Technologies

Partial File Text BSC079N10NS G OptiMOSTM2 Power-Transistor Product Summary Features V DS 7.9 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, Normal le
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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079N10NS BSC079N10NS IEC61249-2-21

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