DSADIGA000108113.pdf by Cree

Partial File Text CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Creeâs CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficienc
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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