DSADIGA000108115.pdf by Cree

Partial File Text CGH40120F 120 W, RF Power GaN HEMT Creeâs CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a gene
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSADIGA000108115.pdf preview Download Datasheet