DSADIGA000108122.pdf by Cree

Partial File Text CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Creeâs CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high eff
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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