DSADIGA000108123.pdf by Cree

Partial File Text CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Creeâs CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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