DSA00389549.pdf by Toshiba

Partial File Text MICROWAVE POWER GaN HEMT TGI1314-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Draft FEATURES HIGH POWER Pout=47.0dBm at Pin=42.0dBm HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz BROAD
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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