DSA00389568.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz HIGH GAIN HERMET
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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