DSA00389598.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM1415-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 14.5GHz to 15.0GHz HIGH GAIN HERMETICAL
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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