DSA00389665.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM6472-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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