DSA00389691.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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