DSAE0010122.pdf by Infineon Technologies

Partial File Text IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 32 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal lev
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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320N20N IEC61249-2-21 IPD320N20N3 IPD320N20N3 G

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