DASF0038777.pdf by Toshiba

Partial File Text TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 24 dBm at f = 15 GHz · High gain - G1dB = 8 dB at f = 15 GHz · Suitable for Ku-Band amplifie
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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S8851 toshiba control code TOSHIBA MICROWAVE AMPLIFIER

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