DASF0038778.pdf by Toshiba
- TOSHIBA S8853 MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 28 dBm at f = 15 GHz · High gain - G1dB = 7 dB at f = 15 GHz · Suitable for Ku-Band amplifie
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