DSAE0011951.pdf by Infineon Technologies

Partial File Text PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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