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    DSARS0019336.pdf by STMicroelectronics

    • M28F101 1 Mbit (128Kb x8, Bulk Erase) Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW
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    M28F101 PDIP32 PLCC32 TSOP32
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