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Tem ic
Semiconductors
SÌ9922DY
I d (A) ±4.0 ±3.7
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
V d s (V) 20 rDS(on) (^ ) 0.080 @ Vos = 4.5 V 0.090 @ Vos = 2.5 V
SO-8
D Q