DSADIGA00019991.pdf by Efficient Power Conversion

Partial File Text eGaNÂ® FET DATASHEET EPC2015 EPC2015 â Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown o
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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