DSA0042681.pdf
by Alliance Semiconductor
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AS4C256K16E0
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5V 256K×16 CMOS DRAM (EDO)
Features
· Organization: 262,144 words × 16 bits
· High speed
- 30/35/50 ns RAS access time
- 16/18/25 ns column address access time
- 7/10/10/10 ns
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Original
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Unknown
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Unknown
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Unknown
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