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    DSA0042681.pdf by Alliance Semiconductor

    • AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO) Features · Organization: 262,144 words × 16 bits · High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns
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    AS4C256K16E0 AS4C256K16E0-35JC
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