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    DSAZIHA2X00039232.pdf by GeneSiC Semiconductor

    • GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS = 20 mΩ ID (Tc = 25°C) = 80 A ID (Tc = 115°C) = 50 A hFE (Tc = 25°C) = 104 Pa
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