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    DSAZIHA2X00039270.pdf by GeneSiC Semiconductor

    • GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS = 180 mΩ ID (Tc = 25°C) = 15 A ID (Tc > 125°C) = 5A hFE (Tc = 25°C) = 102 Package
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