DSAZIHA2X00039280.pdf by GeneSiC Semiconductor
- GA100JT12-227 Normally â OFF Silicon Carbide Junction Transistor VDS = 10 mΩ ID (Tc = 25°C) = 160 A ID (Tc = 115°C) = 100 A hFE (Tc = 25°C) = 104 Package
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