DSAZIHA2X00039285.pdf by GeneSiC Semiconductor
- GA10JT12-263 Normally â OFF Silicon Carbide Junction Transistor VDS = 100 mΩ ID (@ 25°C) = 25 A ID (@ 150°C) = 10 A hFE (@ 25°C) = 80 Package ï· ï·
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