DSA00395513.pdf by Hitachi Semiconductor

Partial File Text 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.Edition. June 1999 Features · Low on-resistance R DS = 2.8 typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 typ. (at
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