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DSAE0013605.pdf
by Infineon Technologies
Partial File Text
IPP08CN10L G OptiMOS®2 Power-Transistor Product Summary Features V DS · N-channel, logic level V R DS(on),max 8 m ID · Excellent gate charge x R DS(on) product (FOM)
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User Tagged Keywords
08CN10
IPP08CN10L
PG-TO220-3