DSA004673.pdf by Intersil

Partial File Text The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabr
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8602 RECTIFIER 8602 RECTIFIER 4 PIN AN8602 applications of mos controlled thyristor ED-26 diode ED26 diode INTERSIL 1981 MOS Controlled Thyristor mos Turn-off Thyristor P channel 600v 20a IGBT P channel 600v 30a IGBT Pelly

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