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    DSAIH000295454.pdf by Renesas Electronics

    • Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 82 mΩ typ (VGS = 10 V, ID = 1.
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