DSA00395835.pdf by Panasonic

Partial File Text Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : P
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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GaAs 1000 nm Infrared Emitting Diode LN162S