The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DASF0042311.pdf
by Toshiba
Partial File Text
GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm · Third-generation IGBT · Enhancement mode type ·
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
Price & Stock
Find it at Findchips.com
DASF0042311.pdf
preview
Download Datasheet
User Tagged Keywords
GT30J101
GT30J301
Price & Stock Powered by