DSARS003651.pdf by Toshiba

Partial File Text 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5A (max) : CT = 3.9pF (typ.) 0.07 M A Absolute Maxi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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1-1L1A 11-L1 1SS413

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