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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA MICROWAVE POWER G a As FET JS9P05-AS FEATURES: â HIGH POWER BHIGH GAIN P1dB=28dBm @ f = 38GHz GldB= 6. 5dB @ f =38GHz â CHIP FORM RF PERFOR
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bonder JS9P05-AS