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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET T1M1414-10B FEATURES : a HIGH POWER H BROAD BAND INTERNALLY MATCHED PitfB = 40.5 dBm at 14.0 GHz to 14.5 GHz S HIGH G
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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