DSA009641.pdf by Fairchild Semiconductor

Partial File Text The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4) Subect The GBTs A ew i h onucance OSated evice Autho () Keyords Fairhild orpoation,
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AN-7504 ED-26 diode ED26 diode GTO thyristor 5A, 400V MOS Controlled Thyristor MOS-Gated Thyristor MOS-Gated Transistors Pelly