DSAEDA000951.pdf by Toshiba

Partial File Text GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm â¢ 5th generation (trench gate structure) IGBT â¢ Enhance
Datasheet Type Original
RoHS Unknown
Pb Free Yes
Lifecycle End Of Life
Price & Stock Find it at Findchips.com

DSAEDA000951.pdf preview

Download Datasheet

Price & Stock Powered by