DSARS005145.pdf by Chino-Excel Technology

Partial File Text CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55m @VGS = 10V. RDS(ON) =75m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).
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CEP20N06 S-890 t

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