DSASW00186613.pdf by Fujitsu

Partial File Text 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors · Advanced lithography and etch technology to achieve 40nm gate length · Low temperature process for shallow junction · P
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10-Layer 90nm cmos 90nm ROM CHIP IPS CS101 CS101SN Etch Microelectronics serdes hsif