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DASF0044023.pdf
by Toshiba
Partial File Text
GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications · Third-generation IGBT · Enhancement mode type · High speed
Datasheet Type
Original
RoHS
No
Pb Free
No
Lifecycle
Obsolete
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DASF0044023.pdf
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GT10Q101
GT10Q301
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