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    • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 -- 14.5G H z BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G
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