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    Part Img DSAEDA00020770.pdf by Infineon Technologies

    • BSO211P H OptiMOS® P-Power-Transistor Product Summary Features VDS • dual P-Channel in SO8 • Qualified according JEDEC for target applications • 150°C operating temperature
    • Original
    • No
    • No
    • Obsolete
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    DSAEDA00020770.pdf preview

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