DSA2IH0099131.pdf by Not Available

Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F0905A Lf S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 5 A , GaAs F E T with an N-channel schottky jate, is designed for use in U H F band amplifie
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Pb Free Unknown
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