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MITSUBISHI SEMICONDUCTOR <GaAs FET>
M G FC39V37 4 2 A
3 .7 --4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET
DESCRIPTION
T h e M G F C 3 9 V 3 7 4 2 A is a n in te m a lly im p e d a n c e -m a tc