DASF0045593.pdf by Toshiba

Partial File Text GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collecto
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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