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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A MICROWAVE POWER GaAs FET DESCRIPTION The M G F2407A , power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band am pli
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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