DSA2IH00100608.pdf by Not Available

Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> P B E t lM Î Î ^ S . S5 "a ' DESCRIPTION The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 4.4 ~
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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