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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: â HIGH POWER â SUITABLE FOR Ku-BAIMD AMPLIFIER p1dB~ 31.5 dBm at f = 15 GHz â HIGH GAIN â ION IMPLANTATION GjdB= 7dB at f = 15
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JS8855-AS SN 46 LS 46

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