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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET S8834 FEATURES: â MEDIUM POWER IdB = 21 dBm at f = 8 GHz HJGH GAIN MdB = 9 dB at f = 8 GHz SUITABLE FOR C-BAND
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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