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Scans-0071946.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: â HIGH POWER â SUITABLE FOR Ku-BAND AMPLIFIER PldB= 21.5dBm at f = 15 GHz â HIGH GAIN â ION IMPLANTATION G1dB=9.0 dB at f = 15
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Obsolete
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Microwave Semiconductor s88
S8850
S8850A
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