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Partial File Text ï»¿TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET S8855 FEATURES: â HIGH POWER P-ldgâ 31.5 dBm at f = 15 GHz â HIGH GAIN GldB= 6.5 dB at f = 15 GHz RF PERFORMANC
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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